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sq2308ces www.vishay.com vishay siliconix s14-0552-rev. a, 24-mar-14 1 document number: 63877 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 60 v (d-s) 175 c mosfet marking code: 8x features ? trenchfet ? power mosfet ? aec-q101 qualified c ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. when mounted on 1" square pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) 60 r ds(on) ( ) at v gs = 10 v 0.150 r ds(on) ( ) at v gs = 4.5 v 0.164 i d (a) 2.3 configuration single top view s ot-2 3 (to-2 3 6) 1 g 2 s d 3 d g s n-channel mosfet ordering information package sot-23 lead (pb)-free and halogen-free sq2308ces-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 2.3 a t c = 125 c 1.3 continuous source curre nt (diode conduction) i s 2.4 pulsed drain current a i dm 9 single pulse avalanche current l = 0.1 mh i as 7 single pulse avalanche energy e as 2.5 mj maximum power dissipation a t c = 25 c p d 2 w t c = 125 c 0.6 operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 120 c/w junction-to-foot (drain) r thjf 80
sq2308ces www.vishay.com vishay siliconix s14-0552-rev. a, 24-mar-14 2 document number: 63877 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 60 v --1 a v gs = 0 v v ds = 60 v, t j = 125 c --50 v gs = 0 v v ds = 60 v, t j = 175 c --150 on-state drain current a i d(on) v gs = 10 v v ds 5 v 10 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 2.3 a - 0.125 0.150 v gs = 10 v i d = 2.3 a, t j = 125 c - - 0.250 v gs = 10 v i d = 2.3 a, t j = 175 c - - 0.325 v gs = 4.5 v i d = 2.1 a - 0.136 0.164 forward transconductance b g fs v ds = 15 v, i d = 2.3 a -5.5- s dynamic b input capacitance c iss v gs = 0 v v ds = 30 v, f = 1 mhz - 164 205 pf output capacitance c oss -2228 reverse transfer capacitance c rss -1418 total gate charge c q g v gs = 10 v v ds = 30 v, i d = 2 a -3.55.3 nc gate-source charge c q gs -0.6- gate-drain charge c q gd -0.7- gate resistance r g f = 1 mhz 2.9 5.84 9 turn-on delay time c t d(on) v dd = 30 v, r l = 15 i d ? 2 a, v gen = 10 v, r g = 1 -46 ns rise time c t r -913 turn-off delay time c t d(off) -1217 fall time c t f -1218 source-drain diode ratings and characteristics b pulsed current a i sm --9a forward voltage v sd i f = 1.6 a, v gs = 0 -0.851.2v
sq2308ces www.vishay.com vishay siliconix s14-0552-rev. a, 24-mar-14 3 document number: 63877 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0.0 2.4 4.8 7.2 9.6 12.0 0 2 4 6 8 10 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 60 120 180 240 300 0 12 24 36 48 60 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.0 0.1 0.2 0.3 0.4 0 2 4 6 8 10 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 1 2 3 4 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 30 v i d = 2 a
sq2308ces www.vishay.com vishay siliconix s14-0552-rev. a, 24-mar-14 4 document number: 63877 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source breakdown vs . junction temperature 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) i d = 2 a v gs = 4.5 v v gs = 10 v 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma 60 64 68 72 76 80 - 50 - 25 0 25 50 75 100 125 150 175 v d s - drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
sq2308ces www.vishay.com vishay siliconix s14-0552-rev. a, 24-mar-14 5 document number: 63877 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s ( on ) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 1 s , 10 s , dc 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. duty cycle, d = 2. per unit base = r thja = 175 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. surface mounted p dm
sq2308ces www.vishay.com vishay siliconix s14-0552-rev. a, 24-mar-14 6 document number: 63877 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63877 . 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 65844 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sot-23 ordering codes for the sq rugged series power mosfets in the sot-23 package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sq2301es sq2301es-t1-ge3 sq2301es-t1_ge3 sq2303es sq2303es-t1-ge3 sq2303es-t1_ge3 sq2308ces sq2308ces-t1-ge3 sq2308ces-t1_ge3 sq2309es sq2309es-t1-ge3 sq2309es-t1_ge3 sq2310es sq2310es-t1-ge3 sq2310es-t1_ge3 sq2315es sq2315es-t1-ge3 sq2315es-t1_ge3 sq2318aes sq2318aes-t1-ge3 sq2318aes-t1_ge3 sq2325es sq2325es-t1-ge3 sq2325es-t1_ge3 sq2337es sq2337es-t1-ge3 sq2337es-t1_ge3 sq2348es sq2348es-t1-ge3 sq2348es-t1_ge3 sq2351es sq2351es-t1-ge3 sq2351es-t1_ge3 sq2361aees - sq2361aees-t1_ge3 sq2361es - sq2361es-t1_ge3 sq2362es - sq2362es-t1_ge3 sq2389es - sq2389es-t1_ge3 sq2398es - sq2398es-t1_ge3
vishay siliconix package information document number: 71196 09-jul-01 www.vishay.com 1 sot-23 (to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pl a ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pl a ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 3 5 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0 3 46 0.040 b 0. 3 5 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3 .04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0748 ref l 0.40 0.60 0.016 0.024 l 1 0.64 ref 0.025 ref s 0.50 ref 0.020 ref q 3 8 3 8 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479
an807 vishay siliconix document number: 70739 26-nov-03 www.vishay.com 1 mounting little foot sot-23 power mosfets wharton mcdaniel surface-mounted little foot power mosfets use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. see application note 826, recommended minimum pad patterns with outline drawing access for vishay siliconix mosfet s, ( http://www.vishay.com/doc?72286 ), for the basis of the pad design for a littl e foot sot-23 power mosfet footprint . in converting this footprint to the pad set for a power device, designers must make tw o connections: an electrical connection and a thermal connection, to draw heat away from the package. the electrical connections for the sot-23 are very simple. pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. as in the other little foot packages, the drai n pin serves the additional function of providing the thermal connection from the package to the pc board. the total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. also, heat spreads in a circular fashion from the heat source. in this case the drain pin is the heat source when looking at heat spread on the pc board. figure 1 shows the footprint with copper spreading for the sot-23 package. this pattern shows the starting point for utilizing the board area available for the heat spreading copper. to create this pattern, a plane of copper over lies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the ambient air. this pattern uses all the available area underneath the body for this purpose. figure 1. footprint with copper spreading 0.114 2.9 0.059 1.5 0.0394 1.0 0.037 0.95 0.150 3.8 0.081 2.05 since surface-mounted packages are small, and reflow soldering is the most common way in whic h these are affixed to the pc board, ?thermal? connections from the planar copper to the pads have not been used. even if additional planar copper area is used, there should be no problems in the soldering process. the actual solder connections are defined by the solder mask openings. by combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. a final item to keep in mind is the width of the power traces. the absolute minimum power trace width must be determined by the amount of current it has to carry. for thermal reasons, this minimum width should be at least 0.020 inches. the use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device.
application note 826 vishay siliconix document number: 72609 www.vishay.com revision: 21-jan-08 25 application note recommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index return to index
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